View IXFN44N50Q03_223793.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS IXFN 44N50Q IXFN 48N50Q
ID25
RDS(on)
500 V 44 A 120 m 500 V 48 A 100 m
trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C 44N50 48N50
Maximum Ratings 500 500 20 30 44 48 176 192 48 60 2.5 15 500 -55 to +150 150 -55 to +150 V V V V A A A A A mJ mJ V/ns W C C C V~ V~ Nm/lb.in. Nm/lb.in. g
miniBLOC, SOT-227 B (IXFN) E153432
S G
S
TC = 25C, pulse width limited by TJM 44N50 48N50 TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
G = Gate S = Source
D = Drain
D
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
50/60 Hz, RMS IISOL 1 mA
t = 1 min t=1s
2500 3000 1.5/13 1.5/13 30
Mounting torque Terminal connection torque
Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive -faster switching * Unclamped Inductive Switching (UIS) rated * Low RDS (on) * Fast intrinsic diode * International standard package * miniBLOC with Aluminium nitride isolation for low thermal resistance * Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) * Molding epoxies meet UL 94 V-0 flammability classification Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.0 4.0 100 TJ = 25C TJ = 125C 100 2 120 100 V V nA A mA
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25
44N50 48N50 Pulse test, t 300 s, duty cycle d 2 %
(c) 2003 IXYS All rights reserved
DS98715B(08/03)
IXFN 44N50Q IXFN 48N50Q
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 42 7000 VGS = 0 V, VDS = 25 V, f = 1 MHz 960 230 33 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 (External), 22 75 10 190 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 40 86 0.26 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 * ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 48 192 1.5 250 A A V ns C A
N O P Q R S T U
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V 1.0 10
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFN 44N50Q IXFN 48N50Q
Fig. 1. Output Characteristics @ 25 Deg. C
48 42 36 VGS = 10V 7V 6V 120
Fig. 2. Extended Output Characteristics @ 25 deg. C
VGS = 10V 8V 7V
90
I D - Amperes
24 18 12 6 0 0 1 2 3 4 5 6 7 8
I D - Amperes
30
60 6V 30 5V 0
5V
V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C
48 42 36 VGS = 10V 7V 6V 2.8 2.6 2.4
0
2
4
6
8
V D S - Volts
10
12
14
16
18
20
Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature
VGS = 10V
R D S (on) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 I D = 48A I D = 24A
I D - Amperes
30 24 18 12 6 0 0 2 4 6 8 10 12 14 16 5V
-50
-25
0
25
50
75
100
125
150
V D S - Volts Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID
3.4 3.1 VGS = 10V TJ = 125C 54 48 42
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S (on) - Normalized
2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0 12 24 36 48 60 72
I D - Amperes
TJ = 25C 84 96 108 120
36 30 24 18 12 6 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
(c) 2003 IXYS All rights reserved
TC - Degrees Centigrade
IXFN 44N50Q IXFN 48N50Q
Fig. 7. Input Adm ittance
60 54 48 80 70 60
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
42 36 30 24 18 12 6 0 3.5 4 4.5 5 5.5 6 6.5 TJ = 125C 25C -40C
50 40 30 20 10 0 0
TJ = -40C 25C 125C
6
12
18
24
30
36
42
48
54
60
V G S - Volts Fig. 9. Source Current vs. Source-ToDrain Voltage
100 90 80 10 9 8 7 VDS = 250V I D = 24A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
70
VG S - Volts
TJ = 25C 0.8 0.9 1 1.1 1.2
60 50 40 30 20 10 0 0.3 0.4 0.5 0.6 0.7 TJ = 125C
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200
V S D - Volts Fig. 11. Capacitance
10000 f = 1MHz C iss 1
Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance
Capacitance - pF
1000
C oss
R (th) J C - (C/W)
35 40
0.1
C rss
100 0 5 10 15 20 25 30
0.01
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
1
Pulse Width - milliseconds
10
100
1000
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

▲Up To Search▲

Price & Availability of IXFN44N50Q03

	To Download IXFN44N50Q03 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .